mpsa26 MPSA27 silicon npn darlington transistors description: the central semiconductor mpsa26 and MPSA27 are silicon npn darlington transistors manufactured by the epitaxial planar process and designed for applications requiring extremely high gain. marking: full part number maximum ratings: (t a =25c) symbol mpsa26 MPSA27 units collector-base voltage v cbo 50 60 v collector-emitter voltage v ces 50 60 v emitter-base voltage v ebo 10 v continuous collector current i c 500 ma power dissipation p d 625 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 200 c/w electrical characteristics: (t a =25c ) mpsa26 MPSA27 symbol test conditions min max min max units i cbo v cb =40v - 100 - - na i cbo v cb =50v - - - 100 na i ces v ce =40v - 500 - - na i ces v ce =50v - - - 500 na i ebo v eb =10v - 100 - 100 na bv cbo i c =100a 50 - 60 - v bv ces i c =100a 50 - 60 - v v ce(sat) i c =100ma, i b =100a - 1.5 - 1.5 v v be(on) v ce =5.0v, i c =100ma - 2.0 - 2.0 v h fe v ce =5.0v, i c =10ma 10,000 - 10,000 - h fe v ce =5.0v, i c =100ma 10,000 - 10,000 - f t v ce =5.0v, i c =10ma, f=100mhz 125 - 125 - mhz to-92 case r0 (18-march 2014) www.centralsemi.com
mpsa26 MPSA27 silicon npn darlington transistors lead code: 1) emitter 2) base 3) collector marking: full part number to-92 case - mechanical outline www.centralsemi.com r0 (18-march 2014)
mpsa26 MPSA27 silicon npn darlington transistors typical electrical characteristics r0 (18-march 2014) www.centralsemi.com
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